Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Schottky diodeDescription: High performance Schottky rectifier, 10A to 15A, Vishay Semiconductor Schottky rectifier is a semiconductor diode with extremely low forward voltage drop and very fast switching function. The reverse recovery time of Schottky diodes is very fast. Schottky diodes are suitable for applications that require fast switching and low power consumption. ###Schottky rectifier, Vishay Semiconductor9052
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Category: MOSpipeDescription: ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDB024N08BL7, 229 A, Vds=80 V, 7引脚 D2PAK (TO-263)封装7868
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Category: MOSpipeDescription: VISHAY SUM110P06-07L-E3 场效应管, MOSFET, P沟道, -60V, 11A, TO-263, 整卷5157
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Category: MOSpipeDescription: INFINEON IPB067N08N3GATMA1 晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V9791
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Category: Schottky diodeDescription: 高性能肖特基整流器,10A 至 15A,Vishay Semiconductor 肖特基整流器是半导体二极管,具有极低的正向电压降和非常快的切换作用。 肖特基二极管的反向恢复时间非常快。 肖特基二极管适用于需要快速切换和低功耗的应用。 ### 肖特基整流器,Vishay Semiconductor1487
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Category: MOSpipeDescription: INFINEON IPB049NE7N3GATMA1 晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0044 ohm, 10 V, 3.1 V8397
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Category: MOSpipeDescription: Infineon OptiMOS ™ 3 power MOSFETs, 60 to 80V OptiMOS ™ The product provides high-performance packaging that can handle the most challenging applications and offers full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the more stringent next-generation voltage regulation standards in computer applications. Fast switching MOSFET for SMPS optimization technology, suitable for JEDEC1 specification N-channel DC/DC converters that meet target applications, with excellent logic level gate charge x R DS (on) products (FOM) and extremely low on resistance R DS (on) lead-free plating # # MOSFET transistors, Infineon Infineon's large and comprehensive MOSFET device portfolio including OptiMOS ™ With CoolMOS ™ Series. These products offer top-notch performance in the latest generation of state-of-the-art power MOSFETs3607
